Hitachi HB52E649E12-A6B 512MB 168p PC100 CL2 18c 64x4 SDRAM 2Rx4 3.3V ECC RDIMM 1.75in-R

Overview
The Hitachi HB52E649E12-A6B is a high-performance 512MB SDRAM module designed for mission critical servers and workstations. Built to Hitachi''s rigorous standards, this 1.75in-R ECC RDIMM delivers reliable error-correcting memory that helps maintain data integrity in demanding computing environments.

Key Features

• 512 megabytes of memory capacity in a compact 1.75in-R form factor
• PC100 168 pins with a CAS latency of 2 for fast access times
• 18 column address bits and 64x4 organization for efficient data handling
• ECC (error correcting code) technology to detect and correct single-bit errors
• 3.3 volt operation for lower power consumption
• Dual rank (2Rx4) design for improved performance and scalability

Technical Specifications

• Manufacturer: Hitachi
• Model/Part Number: HB52E649E12-A6B
• Memory Type: SDRAM
• Capacity: 512 MB
• Data Width: 64 bits
• Organization: 64x4
• Ranks: 2 (2Rx4)
• CAS Latency: CL2
• Clock Speed: PC100 (100 MHz)
• Voltage: 3.3 V
• Form Factor: 1.75in-R RDIMM
• Error Correction: ECC
• Pin Count: 168 pins

Typical Applications

• Enterprise servers that require high reliability and data integrity
• Database and transaction processing systems where error correction is critical
• Scientific and engineering workstations handling large data sets
• Virtualization platforms that benefit from stable memory performance
• Legacy systems that use PC100 SDRAM technology

By choosing the Hitachi HB52E649E12-A6B SDRAM module, users gain a dependable memory solution that enhances system stability, reduces downtime, and supports the rigorous demands of modern computing workloads.