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- In Stock: 50
- Manufacturer: Samsung
- Model or Part: K4B1G1646E-HCF8
- Condition: New
- Weight: 1.00lb
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Overview
The Samsung K4B1G1646E-HCF8 is a high-performance integrated circuit designed for demanding memory applications. This 1Gb DDR3 SDRAM device delivers fast data access, low power consumption and reliable operation across a wide temperature range, making it ideal for use in computers, networking equipment and industrial systems.
Key Features
- High density 1Gb (128M x 16) memory organization for compact board layouts
- DDR3 interface supporting data rates up to 1333 MT/s for rapid data transfer
- Low operating voltage of 1.5V to reduce system power draw
- Advanced error detection and correction capabilities for enhanced data integrity
- Wide temperature range -40 degrees to 85 degrees C for robust performance in harsh environments
- Fine-grain power management with self-refresh and deep power-down modes
- Compact 96-pin TSOP package for space-constrained designs
Technical Specifications
- Capacity: 1Gb (128M words x 16 bits)
- Organization: 128M x 16
- Data Rate: 1066 MT/s, 1333 MT/s
- Voltage: 1.5V (typical)
- Package: 96-pin TSOP
- Operating Temperature: -40 degrees to 85 degrees C
- Refresh Interval: 64 ms
- Clock Frequency: up to 667 MHz
- Pin Count: 96
Typical Applications
- Desktop and laptop memory modules
- Server and data-center memory solutions
- Network routers, switches and firewalls
- Industrial controllers and automation equipment
- Embedded systems requiring high-speed memory access
- Graphics cards and video processing units
By integrating the Samsung K4B1G1646E-HCF8 into your design, you benefit from Samsung's proven semiconductor reliability, high data throughput and energy-efficient operation, helping you deliver faster, more dependable products to your customers.