Samsung K4H511638D-UCCC DDR DRAM, Integrated Circuit, 32MX16, 0.65NS, CMOS, TSOP2-66

Overview
The Samsung K4H511638D-UCCC is a high performance DDR DRAM integrated circuit designed for demanding memory applications. With a 32M x 16 organization and a fast 0.65ns access time, this CMOS device delivers reliable data storage in a compact TSOP2-66 package. Ideal for both consumer electronics and industrial systems, it provides the speed and stability required for modern computing and communication solutions.

Key Features

• 32M words by 16 bits (32Mx16) for high density memory
• Fast 0.65ns access time for low latency operation
• CMOS technology ensures low power consumption and high noise immunity
• TSOP2-66 lead frame offers a small footprint and easy board layout
• Fully compatible with standard DDR interfaces and timing specifications
• Robust design suitable for a wide temperature range and harsh environments

Technical Specifications

• Manufacturer: Samsung
• Part Number: K4H511638D-UCCC
• Memory Type: DDR SDRAM
• Organization: 32M x 16 (512Mbit total)
• Access Time: 0.65ns
• Supply Voltage: 2.5V
• Package: TSOP2-66
• Operating Temperature: -40 to 85 degrees Celsius
• Data Bus Width: 16 bits
• CMOS process technology

Applications

• Mobile phones and handheld devices that require compact high speed memory
• Digital cameras and camcorders for rapid image buffering
• Networking equipment such as routers and switches
• Embedded systems and industrial controllers
• Consumer electronics including set top boxes and smart TVs
• Automotive infotainment and telematics modules