Infineon HYS72V32301GR-7 Memory 256MB 256MB SDRAM 133MHz CL3 ECC REG Memory

Overview
Infineon part number HYS72V32301GR-7 is a high performance 256 megabyte SDRAM module designed for mission critical applications that require error correction and reliable operation. Operating at 133 megahertz with a CAS latency of 3, this memory delivers fast access times while providing full ECC (error correcting code) and registered (REG) features for enhanced data integrity and system stability.

Key Features

• 256 MB capacity organized as 256M x 8 bits
• SDRAM technology with 133 MHz maximum frequency
• CAS latency of 3 clock cycles for quick data retrieval
• Full ECC support to detect and correct single bit errors
• Registered architecture to reduce load on the memory controller
• Low power consumption suitable for energy conscious designs
• Compatible with a wide range of Infineon and third party processors

Technical Specifications

• Memory type: Synchronous DRAM (SDRAM)
• Capacity: 256 megabytes (256M x 8)
• Operating frequency: 133 megahertz (max)
• CAS latency: 3 clock cycles
• Voltage: 1.8 V typical
• Package: 84 lead BGA
• ECC: Yes, single bit error correction, double bit error detection
• Register: Yes, address and command registration
• Temperature range: -40 to 85 degrees Celsius

Typical Applications

• Industrial control systems that require high reliability
• Telecommunications equipment such as routers and switches
• Automotive electronics including advanced driver assistance systems
• Medical devices where data integrity is critical
• Networking infrastructure and server memory expansion
• Embedded computing platforms that need ECC protection

This Infineon 256 MB SDRAM module combines speed, reliability and low power operation, making it an ideal choice for designers seeking robust memory solutions in demanding environments.