Name: 8GB PC3-12800u 2rx8 N-ecc
Brand: Samsung
Price: 34.95 USD
Availability: InStock

Samsung M378B1G73DB0-CK0 8GB PC3-12800u 2rx8 N-ecc

price

$34.95

In Stock: 32
Manufacturer: Samsung
Model or Part: M378B1G73DB0-CK0
Condition: Refurbished
Weight: 3.00lb

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Product Information

Item Condition

New - Sealed or Open Box Condition
Excellent - Almost-New, Missing Original Packaging
Refurbished - Seller Refurbished, Good Condition, Previously Used Item

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Description

Overview

The Samsung M378B1G73DB0-CK0 is an 8GB DDR3 memory module designed for high-performance server and workstation environments. Built to Samsung's rigorous quality standards, this module delivers reliable, error-detecting operation with N-ECC technology, making it ideal for mission critical applications where data integrity is paramount. Its PC3-12800u rating provides a data transfer rate of 12,800 MB/s, ensuring fast response times and smooth multitasking across demanding workloads.

Key Features

8GB capacity in a single 240-pin DIMM form factor
DDR3 PC3-12800u speed (1600 MT/s) for high bandwidth
2Rx8 organization for optimal density and compatibility
Non-ECC (N-ECC) error detection to protect against single-bit errors
Samsung proprietary chip technology for low latency and power efficiency
Standard 1.5V operating voltage to reduce overall system power consumption
Designed for use in rack, blade and tower servers as well as high-end workstations

Technical Specifications

Model/Part Number: M378B1G73DB0-CK0
Capacity: 8GB (8192 MB)
Memory Type: DDR3 SDRAM
Speed: 1600 MHz (PC3-12800u)
Data Rate: 12,800 MB/s
Form Factor: 240-pin DIMM
Organization: 2Rx8
Voltage: 1.5 V
Error Detection: N-ECC (non-error correcting)
Operating Temperature: 0 to 85 deg C
Compatible with: Intel Xeon E5/E7 series, AMD Opteron 4000/6000 series and other server platforms supporting DDR3

Applications

Enterprise servers handling database, virtualization and cloud workloads
High-performance workstations used for CAD, 3D rendering and scientific computing
Blade and rack servers where space and power efficiency are critical
Data center nodes requiring reliable memory with error detection
Upgrade paths for existing DDR3 platforms seeking increased capacity and speed